HJT 2.0 Technology Com bining gettering process and single-side uc-Si technologyto ensure higher cell efficiency and higher module power. -0.26%C Pmax temperature coefficient More stable power generation performance and even better inhot climate. SMBB design with Half-Cut Technology Shorter current transmission distance, less resistive loss andhigher cell efficiency. Up to 90% Bifaciality Natrual symmetrical bifacial structure bringing more energyyield from the backside. Sealing with PIB based sealant Stronger water resistance, greater air impermeability to extentmodule lifespan.

HJT 2.0 Technology Com bining gettering process and single-side uc-Si technologyto ensure higher cell efficiency and higher module power. -0.26%C Pmax temperature coefficient More stable power generation performance and even better inhot climate. SMBB design with Half-Cut Technology Shorter current transmission distance, less resistive loss andhigher cell efficiency. Up to 90% Bifaciality Natrual symmetrical bifacial structure bringing more energyyield from the backside. Sealing with PIB based sealant Stronger water resistance, greater air impermeability to extentmodule lifespan.

HJT 2.0 Technology Com bining gettering process and single-side uc-Si technologyto ensure higher cell efficiency and higher module power. -0.26%C Pmax temperature coefficient More stable power generation performance and even better inhot climate. SMBB design with Half-Cut Technology Shorter current transmission distance, less resistive loss andhigher cell efficiency. Up to 90% Bifaciality Natrual symmetrical bifacial structure bringing more energyyield from the backside. Sealing with PIB based sealant Stronger water resistance, greater air impermeability to extentmodule lifespan.

HJT 2.0 Technology Com bining gettering process and single-side uc-Si technologyto ensure higher cell efficiency and higher module power. -0.26%C Pmax temperature coefficient More stable power generation performance and even better inhot climate. SMBB design with Half-Cut Technology Shorter current transmission distance, less resistive loss andhigher cell efficiency. Up to 90% Bifaciality Natrual symmetrical bifacial structure bringing more energyyield from the backside. Sealing with PIB based sealant Stronger water resistance, greater air impermeability to extentmodule lifespan.

HJT 2.0 Technology Com bining gettering process and single-side uc-Si technologyto ensure higher cell efficiency and higher module power. -0.26%C Pmax temperature coefficient More stable power generation performance and even better inhot climate. SMBB design with Half-Cut Technology Shorter current transmission distance, less resistive loss andhigher cell efficiency. Up to 90% Bifaciality Natrual symmetrical bifacial structure bringing more energyyield from the backside. Sealing with PIB based sealant Stronger water resistance, greater air impermeability to extentmodule lifespan.

HJT 2.0 Technology Com bining gettering process and single-side uc-Si technologyto ensure higher cell efficiency and higher module power. -0.26%C Pmax temperature coefficient More stable power generation performance and even better inhot climate. SMBB design with Half-Cut Technology Shorter current transmission distance, less resistive loss andhigher cell efficiency. Up to 90% Bifaciality Natrual symmetrical bifacial structure bringing more energyyield from the backside. Sealing with PIB based sealant Stronger water resistance, greater air impermeability to extentmodule lifespan.