HJT 2.0 Technology Com bining gettering process and single-side uc-Si technologyto ensure higher cell efficiency and higher module power. -0.26%C Pmax temperature coefficient More stable power generation performance and even better inhot climate. SMBB design with Half-Cut Technology Shorter current transmission distance, less resistive loss andhigher cell efficiency. Up to 90% Bifaciality Natrual symmetrical bifacial structure bringing more energyyield from the backside. Sealing with PIB based sealant Stronger water resistance, greater air impermeability to extentmodule lifespan.